Electronic properties of Si/Si12x2yGexCy heterojunctions
نویسندگان
چکیده
We have used admittance spectroscopy and deep-level transient spectroscopy to characterize electronic properties of Si/Si12x2yGexCy heterostructures. Band offsets measured by admittance spectroscopy for compressively strained Si/Si12x2yGexCy heterojunctions indicate that incorporation of C into Si12x2yGexCy lowers both the valenceand conduction-band edges compared to those in Si12xGex by an average of 10766 meV/% C and 7566 meV/% C, respectively. Combining these measurements indicates that the band alignment is type I for the compositions we have studied, and that these results are consistent with previously reported results on the energy band gap of Si12x2yGexCy and with measurements of conduction band offsets in Si/Si12yCy heterojunctions. Several electron traps were observed using deep-level transient spectroscopy on two n-type heterostructures. Despite the presence of a significant amount of nonsubstitutional C ~0.29–1.6 at. %!, none of the peaks appear attributable to previously reported interstitial C levels. Possible sources for these levels are discussed. © 1998 American Vacuum Society. @S0734-211X~98!10003-3#
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